SI7758DP-T1-GE3
RoHS

SI7758DP-T1-GE3

SI7758DP-T1-GE3

Vishay

MOSFET N-CH 30V 60A PPAK SO-8

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SI7758DP-T1-GE3

Spot quantity: 16404
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Specifications

RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time30 ns
Lead FreeLead Free
Rise Time25 ns
Rds On Max2.9 mΩ
Resistance2.9 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance7.15 nF
Power Dissipation6.25 W
Number of Channels1
Number of Elements1
Turn-On Delay Time53 ns
Radiation HardeningNo
Turn-Off Delay Time56 ns
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance2.9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)34.6 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V