MMBT5550
RoHS

MMBT5550

MMBT5550

Changjiang Electronics

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MMBT5550

Spot quantity: 15560
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Specifications

Collector-Emitter Breakdown Voltage (Vceo)140V
Power Dissipation (Pd)225mW
Collector Current (Ic)600mA
DC Current Gain (hFE@Ic,Vce)60@10mA,5V
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@50mA,5mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)