IPD082N10N3GATMA1
RoHS

IPD082N10N3GATMA1

IPD082N10N3GATMA1

Infineon

MOSFET N-CH 100V 80A TO252-3

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IPD082N10N3GATMA1

Availability: 15924 pieces
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Specifications

RoHSCompliant
MountSurface Mount
Fall Time8 ns
Lead FreeLead Free
PackagingTape & Reel
Rise Time42 ns
Rds On Max8.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Number of Pins3
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance2.99 nF
Power Dissipation125 W
Turn-On Delay Time18 ns
On-State Resistance8.2 mΩ
Turn-Off Delay Time31 ns
Max Power Dissipation125 W
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)80 A
Drain to Source Voltage (Vdss)100 V