IPB13N03LB
RoHS

IPB13N03LB

IPB13N03LB

Infineon

MOSFET N-CH 30V 30A D2PAK

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IPB13N03LB

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Specifications

Vgs(th) (Max) @ Id2V @ 20µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs12.5 mOhm @ 30A, 10V
Power Dissipation (Max)52W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesIPB13N03LBT SP000064218
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds1355pF @ 15V
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 30A (Tc) 52W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C30A (Tc)