Availability:
22843
pieces
Specifications
| Vgs(th) (Max) @ Id | 1V @ 250µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-SO |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 8A, 10V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Other Names | *SI4435DY |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
