SPP35N10
RoHS

SPP35N10

SPP35N10

Infineon

MOSFET N-CH 100V 35A TO220-3

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SPP35N10

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Specifications

Vgs(th) (Max) @ Id4V @ 83µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePG-TO220-3-1
SeriesSIPMOS®
Rds On (Max) @ Id, Vgs44 mOhm @ 26.4A, 10V
Power Dissipation (Max)150W (Tc)
PackagingTube
Package / CaseTO-220-3
Other NamesSP000013851 SPP35N10IN SPP35N10X SPP35N10XTIN SPP35N10XTIN-ND
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 35A (Tc) 150W (Tc) Through Hole PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C35A (Tc)